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FZ800R12KF5

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產(chǎn)品型號FZ800R12KF5

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所在地深圳市

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深圳市邁瑞施電子技術(shù)有限公司

經(jīng)營模式：代理商

商鋪產(chǎn)品：987條

所在地區(qū)：廣東深圳市

聯(lián)系人：曾先生（銷售技術(shù)經(jīng)理）

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產(chǎn)品簡介

FZ800R12KF5品牌：英飛凌（Infineon）、優(yōu)派克（eupec）；
產(chǎn)地：源產(chǎn)于*；
技術(shù)信息 / Technical Information
IGBT-模塊
IGBT-modules
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管

詳細(xì)介紹

FZ800R12KF5品牌：英飛凌(Infineon)、優(yōu)派克（eupec）；

FZ800R12KF5產(chǎn)地：源產(chǎn)于*；

技術(shù)信息 / Technical Information

IGBT-模塊

IGBT-modules

PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管

PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode

初步數(shù)據(jù) / Preliminary Data

深圳市邁瑞施電子技術(shù)有限公司：一家專業(yè)做進(jìn)口 * 現(xiàn)貨批發(fā)零售的企業(yè)，

更詳細(xì)的內(nèi)容敬請登錄公司了解。www.mrs2003。。ｃｏｍ

VCES = 1200V

IC nom = 800A / ICRM = 800A

典型應(yīng)用 Typical Applications

• 斬波應(yīng)用 • Chopper Applications

電氣特性 Electrical Features

• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op

• 高直流電壓穩(wěn)定性 • High DC Stability

• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short

• VCEsat 帶正溫度系數(shù) Circuit Current

• VCEsat with positive Temperature Coefficient

• 低 VCEsat • Low VCEsat

機(jī)械特性 Mechanical Features

• 4 kV 交流 1分鐘絕緣 • 4 kV AC 1min Insulation

• 封裝的 CTI > 400 • Package with CTI > 400

• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances

• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability

• 高功率密度 • High Power Density

IGBT, 斬波器 / IGBT-Chopper

zui大額定值 / Maximum Rated Values

集電極－發(fā)射極電壓	Tvj = 25°C	VCES	1700	V
Collector-emitter voltage	Tvj = 25°C	VCES	1700	V
Collector-emitter voltage


Total power dissipation
Total power dissipation

柵極－發(fā)射極峰值電壓		VGES	+/-20	V
Gate-emitter peak voltage		VGES	+/-20	V
Gate-emitter peak voltage

特征值 / Characteristic Values

min.

typ.

max.

集電極－發(fā)射極飽和電壓

IC = 900 A, VGE = 15 V

Tvj = 25°C

1,70

2,05

Collector-emitter saturation voltage

IC = 900 A, VGE = 15 V

Tvj = 125°C

VCE sat

2,00

IC = 900 A, VGE = 15 V

Tvj = 150°C

2,10

柵極閾值電壓

IC = 33,0 mA, VCE = VGE, Tvj = 25°C

VGEth

5,0

5,8

6,5

Gate threshold voltage

輸入電容

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

Cies

54,0

反向傳輸電容

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

Cres

2,80

Reverse transfer capacitance

柵極-發(fā)射極漏電流

VCE = 0 V, VGE = 20 V, Tvj = 25°C

IGES

400

Gate-emitter leakage current

Rise time, inductive load

VGE = ±15 V

Tvj = 125°C

0,15

µs

RGon = 1,6 W

Tvj = 150°C

0,15

µs

關(guān)斷延遲時(shí)間(電感負(fù)載)

IC = 900 A, VCE = 600 V

Tvj = 25°C

td off

0,70

µs

Turn-off delay time, inductive load

VGE = ±15 V

Tvj = 125°C

0,80

µs

RGoff = 1,6 W

Tvj = 150°C

0,85

µs

下降時(shí)間(電感負(fù)載)

IC = 900 A, VCE = 600 V

Tvj = 25°C

0,20

µs

Fall time, inductive load

VGE = ±15 V

Tvj = 125°C

0,40

µs

關(guān)斷損耗能量 (每脈沖）

IC = 900 A, VCE = 600 V, LS = 45 nH

Tvj = 25°C

150

Turn-off energy loss per pulse

VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C

Eoff

200

RGoff = 1,6 W

Tvj = 150°C

205

短路數(shù)據(jù)

VGE £ 15 V, VCC = 800 V

ISC

結(jié)－外殼熱阻

每個(gè) IGBT / per IGBT

RthJC

29,5

K/kW

Thermal resistance, junction to case

外殼－散熱器熱阻

每個(gè) IGBT / per IGBT

RthCH

16,0

K/kW

Thermal resistance, case to heatsink

lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)

在開關(guān)狀態(tài)下溫度

Tvj op

-40

150

°C

Diode-斬波器 / Diode-Chopper

zui大額定值 / Maximum Rated Values

Repetitive peak reverse voltage


Continuous DC forward current


正向重復(fù)峰值電流	tP = 1 ms		IFRM		1800				A
Repetitive peak forward current


特征值 / Characteristic Values				min.		typ.	max.
正向電壓	IF = 900 A, VGE = 0 V	Tvj = 25°C				1,65	2,15	V
Forward voltage	IF = 900 A, VGE = 0 V	Tvj = 125°C	VF			1,55		V
	IF = 900 A, VGE = 0 V	Tvj = 150°C				1,50		V


Recovered charge	VR = 600 V	Tvj = 125°C	Qr			200		µC
		Tvj = 150°C				225		µC

Reverse recovery energy	VR = 600 V	Tvj = 125°C	Erec			90,0		mJ
		Tvj = 150°C				105		mJ

結(jié)－外殼熱阻	每個(gè)二極管 / per diode		RthJC				37,0	K/kW
Thermal resistance, junction to case


外殼－散熱器熱阻	每個(gè)二極管 / per diode		RthCH			20,0		K/kW

反向二極管 / Diode, Reverse

zui大額定值 / Maximum Rated Values

反向重復(fù)峰值電壓	Tvj = 25°C	VRRM	1200		V
Repetitive peak reverse voltage	Tvj = 25°C	VRRM	1200		V
Repetitive peak reverse voltage

連續(xù)正向直流電流		IF	120		A
Continuous DC forward current		IF	120		A
Continuous DC forward current

Repetitive peak forward current
Repetitive peak forward current

I2t-值	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t	0,17	kA²s
I²t - value	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t	0,17	kA²s
I²t - value

特征值 / Characteristic Values				min.	typ.	max.
正向電壓	IF = 120 A, VGE = 0 V	Tvj = 25°C	VF		1,65	2,15	V
Forward voltage	IF = 120 A, VGE = 0 V	Tvj = 125°C	VF		1,65		V
Forward voltage	IF = 120 A, VGE = 0 V	Tvj = 125°C			1,65		V
結(jié)－外殼熱阻	每個(gè)二極管 / per diode		RthJC			340	K/kW
Thermal resistance, junction to case	每個(gè)二極管 / per diode		RthJC			340	K/kW
Thermal resistance, junction to case