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深圳市邁瑞施電子技術(shù)有限公司


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SKM800GA125D03071

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產(chǎn)品型號(hào)SKM800GA125D03071

品       牌

廠商性質(zhì)代理商

所  在  地深圳市

聯(lián)系方式:曾先生查看聯(lián)系方式

更新時(shí)間:2016-07-12 15:45:04瀏覽次數(shù):136次

聯(lián)系我時(shí),請(qǐng)告知來(lái)自 環(huán)保在線

經(jīng)營(yíng)模式:代理商

商鋪產(chǎn)品:987條

所在地區(qū):廣東深圳市

聯(lián)系人:曾先生 (銷售技術(shù)經(jīng)理)

產(chǎn)品簡(jiǎn)介

SKM800GA125D03071品牌:西門(mén)康又名賽米控Semikron;
產(chǎn)地:*;
PrimePACK™2 模塊采用第三代溝槽柵/場(chǎng)終止IGBT3和增大的第三代發(fā)射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode

詳細(xì)介紹

SKM800GA125D03071品牌:西門(mén)康又名賽米控Semikron;

SKM800GA125D03071產(chǎn)地:*;

PrimePACK™2 模塊采用第代溝槽柵/場(chǎng)終止IGBT3和增大的第代發(fā)射極控制二極管

PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode

初步數(shù)據(jù) / Preliminary Data

深圳市邁瑞施電子技術(shù)有限公司:一家專業(yè)做進(jìn)口 * 現(xiàn)貨 批發(fā)零售的企業(yè),

更詳細(xì)的內(nèi)容 敬請(qǐng)登錄公司了解。www.mrs2003。。com

VCES = 1200V

IC nom = 800A / ICRM = 800A

典型應(yīng)用 Typical Applications

• 斬波應(yīng)用 • Chopper Applications

電氣特性 Electrical Features

• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op

• 高直流電壓穩(wěn)定性 • High DC Stability

• 高短路能力,自限制短路電流 • High Short Circuit Capability, Self Limiting Short

• VCEsat 帶正溫度系數(shù) Circuit Current

• VCEsat  with positive Temperature Coefficient

• 低  VCEsat • Low VCEsat

機(jī)械特性 Mechanical Features

• 4 kV 交流   1分鐘 絕緣 • 4 kV AC 1min Insulation

• 封裝的 CTI > 400 • Package with CTI > 400

• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances

• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability

• 高功率密度 • High Power Density

• 低熱阻襯底 • Substrate for Low Thermal Resistance

SEMiX503GD126HDc SKD62/12 SKKD260/20H4 SKKH570/16E SKM150GAL12T4

SEMiX603GAL066HDS SKD62/14 SKKD380/08 SKKH570/18E SKM150GAL12V

SEMiX603GB066HDS SKD62/18 SKKD380/16 SKKQ1200/18E SKM150GAR12T4

SEMiX604GB176HDS SKD82/18 SKKD701/18 SKKQ560/18E SKM150GB173D

SEMiX703GAL126HDS SKDH115/16 SKKE120F17 SKKT106/14E SKM195GB066D

SEMiX703GAR126HDS SKDH116/16-L75 SKKE162/08 SKKT106/16E SKM195GB126D

SEMiX703GB126HDS SKDT100/08 SKKE162/12 SKKT106/18E SKM200GAL123D

SEMiX703GD126HDc SKDT100/12 SKKE162/14 SKKT106B12E SKM200GAL125D

SK100B16 SKDT115/12 SKKE162/22H4TS SKKT107/16E SKM200GAL12T4

SK100GB066T SKDT115/16 SKKE290F06 SKKT107B16E SKM200GAL172DL3

SK100GB12T4T SKDT145/12 SKKE301F12 SKKT122/12E SKM200GAL173D

SK100GD066T SKDT60/04 SKKE310F12 SKKT122/16E SKM200GAL176D

SK100GD126T SKDT60/08 SKKE330F17 SKKT122/18E SKM200GAR123D

SK100GD12T4T SKDT60/12 SKKE380/12 SKKT132/08E SKM200GAR125D

SK100GH12T4T SKDT60/14 SKKE380/16 SKKT132/12E SKM200GAR173D

SK100KQ12 SKET330/12E SKKE600/12 SKKT132/14E SKM200GB063D

SK100KQ16 SKET330/16E SKKE600/16 SKKT132/16E SKM200GB123D

SK100MLI066T SKET330/18E SKKE600/20H4 SKKT132/18E SKM200GB125D

SK100WT12 SKET330/22E SKKE600/22H4 SKKT132/20EH4 SKM200GB126D

SK10DGDL126ET SKET400/08E SKKE600F12 SKKT132/22EH4 SKM200GB12E4

SK10DGDL12T4ET SKET400/12E SKKH106/12E SKKT162/08E SKM200GB12T4

SK10GD126ET SKET400/14E SKKH106/14E SKKT162/12E SKM200GB12V

SK10GD12T4ET SKET400/16E SKKH106/16E SKKT162/14E SKM200GB172DL3

SK10GH123 SKET400/18E SKKH106/18E SKKT162/16E SKM200GB173D

SK120KQ12 SKET740/18GH4 SKKH107/16E SKKT162/18E SKM200GB173D1

SK120KQ16 SKET740/22GH4 SKKH122/16E SKKT162/20EH4 SKM200GB176D

SK200DHL066 SKET800/14GH4 SKKH132/08E SKKT162/22EH4 SKM200GBD123D

SK300MB075 SKET800/18GH4 SKKH132/12E SKKT172/14E SKM200GBD126D

SK30DGDL066ET SKiM220GD176DH4 SKKH132/16E SKKT172/16E SKM200GM12T4

SKD100/12 SKiM300GD126DL SKKH162/08E SKKT250/12E SKM300GA12T4

SKD110/16 SKiM601GD126DLM SKKH162/18E SKKT273/16E SKM300GAL12E4

SKD110/18 SKiM601GD126DM SKKH162/20EH4 SKKT273/18E SKM300GAL12T4

SKD115/12 SKKD100/08 SKKH162/22EH4 SKKT280/20EH4 SKM300GAR063D

SKD160/12 SKKD100/18 SKKH250/16E SKKT330/08E SKM300GB123D

SKD160/16 SKKD101/16 SKKH250/18E SKKT330/12E SKM300GB125D

SKD160/18 SKKD105F08 SKKH273/12E SKKT330/16E SKM300GB126D

SKD210/08 SKKD105F10 SKKH273/16E SKKT330/18E SKM300GB12E4

SKD210/12 SKKD105F12 SKKH280/20EH4 SKKT430/16E SKM300GB12T4

SKD210/16 SKKD115F12 SKKH280/22EH4 SKKT460/16E SKM300GB12V

SKD210/18 SKKD115F14 SKKH323/12E SKKT460/22EH4 SKM300GBD12T4

SKD31/02 SKKD150F12 SKKH323/16E SKKT570/12E SKM300GM12T4

SKD31/04 SKKD162/08 SKKH330/08E SKKT570/16E SKM400GA123D

SKD31/08 SKKD162/12 SKKH330/12E SKKT570/18E SKM400GA12E4

SKD31/12 SKKD162/14 SKKH330/16E SKM100GAL123D SKM400GA12T4

SKD31/14 SKKD162/16 SKKH330/18E SKM100GAL12T4 SKM400GA12V

SKD31/16 SKKD162/18 SKKH460/16E SKM100GAR123D SKM400GA173D

SKD60/08 SKKD162/20H4 SKKH460/22EH4 SKM100GB063D SKM400GAL125D

SKD60/12 SKKD162/22H4 SKKH570/12E SKM100GB123D SKM400GAL126D

SKD60/16 SKKD170F12 SKM500GA123D SKM100GB125DNN SKM400GAL12E4

SKD62/04 SKKD205F06 SKM500GA123DS SKM100GB12T4 SKM400GAL12T4

SKD62/08 SKKD212/12 SKM50GAL123D SKM100GB12T4G SKM400GAL12V

SKM600GA125D SKKD212/16 SKM50GAL12T4 SKM100GB12V SKM400GAL176D04119

SKM600GA126D03141 SKKD260/08 SKM50GB063D SKM100GB173D SKM400GAL176DL3

SKM600GA12E4 SKKD260/12 SKM50GB123D SKM100GB176D SKM400GAR125D

SKM600GA12T4 SKKD260/16 SKM50GB12T4 SKM145GAL123D SKM400GAR12E4

SKM600GA12V SKM75GB063D SKM400GB12V SKM145GAL176D SKM400GAR12T4

SKM600GA176D SKM75GB123D SKM400GB176D SKM145GAR123D SKM400GB066D

SKM600GAL126D SKM75GB12T4 SKM400GB176DL3 SKM145GB066D SKM400GB123D

SKM600GB066D SKM75GB12V SKM400GM12T4 SKM145GB123D SKM400GB125D

SKM600GB126D SKM75GB173D SKM40GAH123DTS95036 SKM145GB176D SKM400GB126D

SKM75GAL063D SKM75GB176D SKM40GD123D SKM150GAL123D SKM400GB12E4

SKM75GAL123D SKM75GD123D SKM40GD124DTS97066 SKM400GB12T4

SKM75GAR063D SKM75GDL123D SKM800GA176D

SKM75GAR123D SKM800GA126D

 

 IGBT, 斬波器 / IGBT-Chopper

zui大額定值 / Maximum Rated Values

 

集電極-發(fā)射極電壓

Tvj = 25°C

VCES

 

1200

 

V

Collector-emitter voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

連續(xù)集電極直流電流

TC = 100°C, Tvj max = 175°C

IC nom

 

800

 

A

Continuous DC collector current

 

 

 

 

 

 

 

 

 

 

 

 

 

集電極重復(fù)峰值電流

tP = 1 ms

ICRM

 

1800

 

A

Repetitive peak collector current

 

 

 

 

 

 

 

 

 

 

 

 

 

總功率損耗

TC = 25°C, Tvj max = 175°C

Ptot

 

5,10

 

kW

Total power dissipation

 

 

 

 

 

 

 

 

 

 

 

 

 

柵極-發(fā)射極峰值電壓

 

VGES

 

+/-20

 

V

Gate-emitter peak voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

特征值 / Characteristic Values

 

 

 

 

min.

typ.

max.

 

集電極-發(fā)射極飽和電壓

IC = 900 A, VGE = 15 V

 

Tvj = 25°C

 

 

1,70

2,05

V

Collector-emitter saturation voltage

IC = 900 A, VGE = 15 V

 

Tvj = 125°C

VCE sat

 

2,00

 

V

 

IC = 900 A, VGE = 15 V

 

Tvj = 150°C

 

 

2,10

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate charge

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

內(nèi)部柵極電阻

Tvj = 25°C

 

 

RGint

 

1,2

 

W

Internal gate resistor

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

輸入電容

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

 

Cies

 

54,0

 

nF

Input capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

反向傳輸電容

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

 

Cres

 

2,80

 

nF

Reverse transfer capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

集電極-發(fā)射極截止電流

VCE = 1200 V, VGE = 0 V, Tvj = 25°C

 

ICES

 

 

5,0

mA

Collector-emitter cut-off current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

柵極-發(fā)射極漏電流

VCE = 0 V, VGE = 20 V, Tvj = 25°C

 

 

IGES

 

 

400

nA

Gate-emitter leakage current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

開(kāi)通延遲時(shí)間(電感負(fù)載)

IC = 900 A, VCE = 600 V

 

Tvj = 25°C

td on

 

0,20

 

µs

Turn-on delay time, inductive load

VGE = ±15 V

 

Tvj = 125°C

0,22

µs

 

 

 

 

 

 

 

 

 

RGon = 1,6 W

 

Tvj = 150°C

 

 

0,22

 

µs

 

 

 

 

 

 

 

 

 

上升時(shí)間(電感負(fù)載)

IC = 900 A, VCE = 600 V

 

Tvj = 25°C

tr

 

0,14

 

µs

Rise time, inductive load

VGE = ±15 V

 

Tvj = 125°C

 

0,15

 

µs

 

 

 

RGon = 1,6 W

 

Tvj = 150°C

 

 

0,15

 

µs

 

 

 

 

 

 

 

 

 

關(guān)斷延遲時(shí)間(電感負(fù)載)

IC = 900 A, VCE = 600 V

 

Tvj = 25°C

td off

 

0,70

 

µs

Turn-off delay time, inductive load

VGE = ±15 V

 

Tvj = 125°C

0,80

µs

 

 

 

 

 

 

 

 

 

RGoff = 1,6 W

 

Tvj = 150°C

 

 

0,85

 

µs

 

 

 

 

 

 

 

 

 

下降時(shí)間(電感負(fù)載)

IC = 900 A, VCE = 600 V

 

Tvj = 25°C

tf

 

0,20

 

µs

Fall time, inductive load

VGE = ±15 V

 

Tvj = 125°C

 

0,40

 

µs

 

 

 

RGoff = 1,6 W

 

Tvj = 150°C

 

 

0,45

 

µs

 

 

 

 

 

 

 

 

開(kāi)通損耗能量 (每脈沖)

IC = 900 A, VCE = 600 V, LS = 45 nH

Tvj = 25°C

 

 

50,0

 

mJ

Turn-on energy loss per pulse

VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C

Eon

70,0

mJ

 

RGon = 1,6 W

 

Tvj = 150°C

 

 

80,0

 

mJ

 

 

 

 

 

 

 

 

關(guān)斷損耗能量 (每脈沖)

IC = 900 A, VCE = 600 V, LS = 45 nH

Tvj = 25°C

 

 

150

 

mJ

Turn-off energy loss per pulse

VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C

Eoff

200

mJ

 

RGoff = 1,6 W

 

Tvj = 150°C

 

 

205

 

mJ

 

 

 

 

 

 

 

 

 

短路數(shù)據(jù)

VGE £ 15 V, VCC = 800 V

 

 

ISC

 

 

 

 

SC data

VCEmax = VCES -LsCE ·di/dt

tP £ 10 µs, Tvj = 150°C

3600

A

 

 

 

結(jié)-外殼熱阻

每個(gè) IGBT / per IGBT

 

 

RthJC

 

 

29,5

K/kW

Thermal resistance, junction to case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

外殼-散熱器熱阻

每個(gè) IGBT / per IGBT

 

 

RthCH

 

16,0

 

K/kW

Thermal resistance, case to heatsink

lPaste = 1 W/(m·K)   /    lgrease = 1 W/(m·K)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

在開(kāi)關(guān)狀態(tài)下溫度

 

 

 

Tvj op

-40

 

150

°C

Diode-斬波器 / Diode-Chopper

 zui大額定值 / Maximum Rated Values

 

反向重復(fù)峰值電壓

Tvj = 25°C

VRRM

 

1200

 

V

Repetitive peak reverse voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

連續(xù)正向直流電流

 

IF

 

900

 

A

Continuous DC forward current

 

 

 

 

 

 

 

 

 

 

 

 

 

正向重復(fù)峰值電流

tP = 1 ms

IFRM

 

1800

 

A

Repetitive peak forward current

 

 

 

 

 

 

 

 

 

 

 

 

 

I2t-值

VR = 0 V, tP = 10 ms, Tvj = 125°C

I²t

 

150

 

kA²s

I²t - value

VR = 0 V, tP = 10 ms, Tvj = 150°C

145

kA²s

 

特征值 / Characteristic Values

 

 

 

min.

typ.

max.

 

正向電壓

IF = 900 A, VGE = 0 V

Tvj = 25°C

 

 

1,65

2,15

V

Forward voltage

IF = 900 A, VGE = 0 V

Tvj = 125°C

VF

 

1,55

 

V

 

IF = 900 A, VGE = 0 V

Tvj = 150°C

 

 

1,50

 

V

 

 

 

 

 

 

 

 

反向恢復(fù)峰值電流

IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)

Tvj = 25°C

 

 

560

 

A

Peak reverse recovery current

VR = 600 V

Tvj = 125°C

IRM

 

770

 

A

 

 

Tvj = 150°C

 

 

820

 

A

 

 

 

 

 

 

 

 

恢復(fù)電荷

IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)

Tvj = 25°C

 

 

110

 

µC

Recovered charge

VR = 600 V

Tvj = 125°C

Qr

 

200

 

µC

 

 

Tvj = 150°C

 

 

225

 

µC

 

 

 

 

 

 

 

 

反向恢復(fù)損耗(每脈沖)

IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)

Tvj = 25°C

 

 

50,0

 

mJ

Reverse recovery energy

VR = 600 V

Tvj = 125°C

Erec

 

90,0

 

mJ

 

 

Tvj = 150°C

 

 

105

 

mJ

 

 

 

 

 

 

 

 

結(jié)-外殼熱阻

每個(gè)二極管 / per diode

 

RthJC

 

 

37,0

K/kW

Thermal resistance, junction to case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

外殼-散熱器熱阻

每個(gè)二極管 / per diode

 

RthCH

 

20,0

 

K/kW

Thermal resistance, case to heatsink

lPaste = 1 W/(m·K)   /    lgrease = 1 W/(m·K)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

在開(kāi)關(guān)狀態(tài)下溫度

 

 

Tvj op

-40

 

150

°C

Temperature under switching conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

反向二極管 / Diode, Reverse

zui大額定值 / Maximum Rated Values

 

反向重復(fù)峰值電壓

Tvj = 25°C

VRRM

 

1200

 

V

Repetitive peak reverse voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

連續(xù)正向直流電流

 

IF

 

120

 

A

Continuous DC forward current

 

 

 

 

 

 

 

 

 

 

 

 

 

正向重復(fù)峰值電流

tP = 1 ms

IFRM

 

240

 

A

Repetitive peak forward current

 

 

 

 

 

 

 

 

 

 

 

 

 

I2t-值

VR = 0 V, tP = 10 ms, Tvj = 125°C

I²t

 

0,17

kA²s

I²t - value

 

賽米控可控硅、晶閘管、IGBT模塊,西門(mén)康可控硅、晶閘管、IGBT模塊。

中文資料,技術(shù)參數(shù), PDF datasheet,圖片。

關(guān)鍵詞:散熱器
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