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深圳市邁瑞施電子技術(shù)有限公司
深圳市邁瑞施電子技術(shù)有限公司
| 參 考 價 | 面議 |
產(chǎn)品型號SKM75GB123D
品 牌
廠商性質(zhì)代理商
所 在 地深圳市
聯(lián)系方式：曾先生查看聯(lián)系方式
更新時間：2016-07-12 16:01:18瀏覽次數(shù)：496次
聯(lián)系我時，請告知來自 環(huán)保在線SKM75GB123D品牌：西門康又名賽米控Semikron；
產(chǎn)地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode
SKM75GB123D品牌：西門康又名賽米控Semikron；
SKM75GB123D產(chǎn)地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode
初步數(shù)據(jù) / Preliminary Data
深圳市邁瑞施電子技術(shù)有限公司：一家專業(yè)做進(jìn)口 * 現(xiàn)貨 批發(fā)零售的企業(yè)，
更詳細(xì)的內(nèi)容 敬請登錄公司了解。www.mrs2003。。ｃｏｍ
典型應(yīng)用 Typical Applications
• 斬波應(yīng)用 • Chopper Applications
電氣特性 Electrical Features
• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op
• 高直流電壓穩(wěn)定性 • High DC Stability
• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short
• VCEsat 帶正溫度系數(shù) Circuit Current
• VCEsat with positive Temperature Coefficient
• 低 VCEsat • Low VCEsat
機(jī)械特性 Mechanical Features
• 4 kV 交流 1分鐘 絕緣 • 4 kV AC 1min Insulation
• 封裝的 CTI > 400 • Package with CTI > 400
• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability
• 高功率密度 • High Power Density
• 低熱阻襯底 • Substrate for Low Thermal Resistance
SK200DHL066 SKET800/14GH4 SKKH132/08E SKKT162/22EH4 SKM200GBD123D
SK300MB075 SKET800/18GH4 SKKH132/12E SKKT172/14E SKM200GBD126D
SK30DGDL066ET SKiM220GD176DH4 SKKH132/16E SKKT172/16E SKM200GM12T4
SKD110/16 SKiM601GD126DLM SKKH162/18E SKKT273/16E SKM300GAL12E4
SKD115/12 SKKD100/08 SKKH162/22EH4 SKKT280/20EH4 SKM300GAR063D
SKD160/12 SKKD100/18 SKKH250/16E SKKT330/08E SKM300GB123D
SKD210/08 SKKD105F10 SKKH273/16E SKKT330/18E SKM300GB12E4
SKD210/16 SKKD115F12 SKKH280/22EH4 SKKT460/16E SKM300GB12V
SKD31/02 SKKD150F12 SKKH323/16E SKKT570/12E SKM300GM12T4
SKD31/12 SKKD162/14 SKKH330/16E SKM100GAL123D SKM400GA12T4
SKD31/14 SKKD162/16 SKKH330/18E SKM100GAL12T4 SKM400GA12V
SKD31/16 SKKD162/18 SKKH460/16E SKM100GAR123D SKM400GA173D
SKD60/08 SKKD162/20H4 SKKH460/22EH4 SKM100GB063D SKM400GAL125D
SKD60/16 SKKD170F12 SKM500GA123D SKM100GB125DNN SKM400GAL12E4
SKD62/04 SKKD205F06 SKM500GA123DS SKM100GB12T4 SKM400GAL12T4
SKD62/08 SKKD212/12 SKM50GAL123D SKM100GB12T4G SKM400GAL12V
SKM600GA125D SKKD212/16 SKM50GAL12T4 SKM100GB12V SKM400GAL176D04119
SKM600GA126D03141 SKKD260/08 SKM50GB063D SKM100GB173D SKM400GAL176DL3
SKM600GB066D SKM75GB12V SKM400GM12T4 SKM145GB123D SKM400GB125D
SKM600GB126D SKM75GB173D SKM40GAH123DTS95036 SKM145GB176D SKM400GB126D
SKM75GAL063D SKM75GB176D SKM40GD123D SKM150GAL123D SKM400GB12E4
SKM75GAL123D SKM75GD123D SKM40GD124DTS97066 SKM400GB12T4
SKM75GAR063D SKM75GDL123D SKM800GA125D03071 SKM800GA176D
SKM75GAR123D SKM800GA126D
IGBT, 斬波器 / IGBT-Chopper
zui大額定值 / Maximum Rated Values
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集電極重復(fù)峰值電流 | tP = 1 ms | ICRM |
| 1800 |
| A |
Repetitive peak collector current | ||||||
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總功率損耗 | TC = 25°C, Tvj max = 175°C | Ptot |
| 5,10 |
| kW |
Total power dissipation | ||||||
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柵極－發(fā)射極峰值電壓 |
| VGES |
| +/-20 |
| V |
Gate-emitter peak voltage | ||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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集電極－發(fā)射極飽和電壓 | IC = 900 A, VGE = 15 V |
| Tvj = 25°C |
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| 1,70 | 2,05 | V |
Collector-emitter saturation voltage | IC = 900 A, VGE = 15 V |
| Tvj = 125°C | VCE sat |
| 2,00 |
| V |
| IC = 900 A, VGE = 15 V |
| Tvj = 150°C |
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| 2,10 |
| V |
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Gate charge |
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內(nèi)部柵極電阻 | Tvj = 25°C |
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| RGint |
| 1,2 |
| W |
Internal gate resistor |
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反向傳輸電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cres |
| 2,80 |
| nF | |
Reverse transfer capacitance |
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集電極-發(fā)射極截止電流 | VCE = 1200 V, VGE = 0 V, Tvj = 25°C |
| ICES |
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| 5,0 | mA | |
Collector-emitter cut-off current |
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開通延遲時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td on |
| 0,20 |
| µs |
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上升時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tr |
| 0,14 |
| µs |
Rise time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,15 |
| µs | |
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,15 |
| µs |
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關(guān)斷延遲時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td off |
| 0,70 |
| µs |
Turn-off delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,80 | µs | |||
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,85 |
| µs |
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下降時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tf |
| 0,20 |
| µs |
Fall time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,40 |
| µs | |
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,45 |
| µs |
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外殼－散熱器熱阻 | 每個 IGBT / per IGBT |
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| RthCH |
| 16,0 |
| K/kW |
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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在開關(guān)狀態(tài)下溫度 |
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| Tvj op | -40 |
| 150 | °C |
Diode-斬波器 / Diode-Chopper
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V | |||||
Repetitive peak reverse voltage | |||||||||||
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連續(xù)正向直流電流 | SKM75GB176D | IF |
| 900 |
| A | |||||
Continuous DC forward current | |||||||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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反向恢復(fù)峰值電流 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 560 |
| A | ||||
Peak reverse recovery current | VR = 600 V | Tvj = 125°C | IRM |
| 770 |
| A | ||||
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| Tvj = 150°C |
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| 820 |
| A | ||||
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恢復(fù)電荷 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 110 |
| µC | ||||
Recovered charge | VR = 600 V | Tvj = 125°C | Qr |
| 200 |
| µC | ||||
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| Tvj = 150°C |
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| 225 |
| µC | ||||
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Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個二極管 / per diode |
| RthCH |
| 20,0 |
| K/kW | ||||
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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反向二極管 / Diode, Reverse
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續(xù)正向直流電流 |
| IF |
| 120 |
| A |
Continuous DC forward current | ||||||
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正向重復(fù)峰值電流 | tP = 1 ms | IFRM |
| 240 |
| A |
Repetitive peak forward current | ||||||
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賽米控可控硅、晶閘管、IGBT模塊，西門康可控硅、晶閘管、IGBT模塊。
中文資料，技術(shù)參數(shù)， PDF datasheet,圖片。
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