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深圳市邁瑞施電子技術(shù)有限公司
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深圳市邁瑞施電子技術(shù)有限公司
| 參 考 價(jià) | 面議 |
產(chǎn)品型號(hào)FZ1200R16KF1
品 牌
廠商性質(zhì)代理商
所 在 地深圳市
聯(lián)系方式：曾先生查看聯(lián)系方式
更新時(shí)間：2016-07-12 10:27:26瀏覽次數(shù)：200次
聯(lián)系我時(shí)，請(qǐng)告知來自 環(huán)保在線FZ1200R16KF1品牌：英飛凌（Infineon）、優(yōu)派克（eupec）；
產(chǎn)地：源產(chǎn)于*；
技術(shù)信息 / Technical Information
IGBT-模塊
IGBT-modules
PrimePACK™2 模塊采用第三代溝槽柵/場(chǎng)終止IGBT3和增大的第三代發(fā)射極控制二極管
FZ1200R16KF1品牌：英飛凌(Infineon)、優(yōu)派克（eupec）；
FZ1200R16KF1產(chǎn)地：源產(chǎn)于*；
技術(shù)信息 / Technical Information
IGBT-模塊
IGBT-modules
PrimePACK™2 模塊采用第三代溝槽柵/場(chǎng)終止IGBT3和增大的第三代發(fā)射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode
初步數(shù)據(jù) / Preliminary Data
深圳市邁瑞施電子技術(shù)有限公司：一家專業(yè)做進(jìn)口 * 現(xiàn)貨 批發(fā)零售的企業(yè)，
更詳細(xì)的內(nèi)容 敬請(qǐng)登錄公司了解。www.mrs2003。。ｃｏｍ
VCES = 1200V
IC nom = 800A / ICRM = 800A
典型應(yīng)用 Typical Applications
• 斬波應(yīng)用 • Chopper Applications
電氣特性 Electrical Features
• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op
• 高直流電壓穩(wěn)定性 • High DC Stability
• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short
• VCEsat 帶正溫度系數(shù) Circuit Current
• VCEsat with positive Temperature Coefficient
• 低 VCEsat • Low VCEsat
機(jī)械特性 Mechanical Features
• 4 kV 交流 1分鐘 絕緣 • 4 kV AC 1min Insulation
• 封裝的 CTI > 400 • Package with CTI > 400
• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances
• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability
• 高功率密度 • High Power Density
IGBT, 斬波器 / IGBT-Chopper
zui大額定值 / Maximum Rated Values
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Total power dissipation |
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柵極－發(fā)射極峰值電壓 | VGES |
| +/-20 |
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Gate-emitter peak voltage | ||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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集電極－發(fā)射極飽和電壓 | IC = 900 A, VGE = 15 V |
| Tvj = 25°C |
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| 1,70 | 2,05 | V | |||||||
Collector-emitter saturation voltage | IC = 900 A, VGE = 15 V |
| Tvj = 125°C | VCE sat |
| 2,00 |
| V | |||||||
| IC = 900 A, VGE = 15 V |
| Tvj = 150°C |
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| 2,10 |
| V | |||||||
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Gate threshold voltage |
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輸入電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cies |
| 54,0 |
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反向傳輸電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cres |
| 2,80 |
| nF | ||||||||
Reverse transfer capacitance |
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柵極-發(fā)射極漏電流 | VCE = 0 V, VGE = 20 V, Tvj = 25°C |
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| IGES |
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| 400 | nA | |||||||
Gate-emitter leakage current |
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Rise time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
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| 0,15 |
| µs | |||||||
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Turn-off delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
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| 0,80 |
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FZ1800R16KF4 | RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,85 |
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下降時(shí)間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tf |
| 0,20 |
| µs | |||||||
Fall time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,40 |
| µs | ||||||||
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關(guān)斷損耗能量 (每脈沖） | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 150 |
| mJ | ||||||||
Turn-off energy loss per pulse | VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C | Eoff | 200 | mJ | |||||||||||
| RGoff = 1,6 W |
| Tvj = 150°C |
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| 205 |
| mJ | |||||||
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短路數(shù)據(jù) | VGE £ 15 V, VCC = 800 V |
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結(jié)－外殼熱阻 | 每個(gè) IGBT / per IGBT |
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| RthJC |
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| 29,5 | K/kW | |||||||
Thermal resistance, junction to case |
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在開關(guān)狀態(tài)下溫度 |
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| Tvj op | -40 |
| 150 | °C | |||||||
Diode-斬波器 / Diode-Chopper
zui大額定值 / Maximum Rated Values
Repetitive peak reverse voltage |
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Continuous DC forward current |
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正向重復(fù)峰值電流 | tP = 1 ms | IFRM |
| 1800 |
| A | |||||
Repetitive peak forward current | |||||||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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正向電壓 | IF = 900 A, VGE = 0 V | Tvj = 25°C |
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| 1,65 | 2,15 | V | ||||
Forward voltage | IF = 900 A, VGE = 0 V | Tvj = 125°C | VF |
| 1,55 |
| V | ||||
| IF = 900 A, VGE = 0 V | Tvj = 150°C |
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| 1,50 |
| V | ||||
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Recovered charge | VR = 600 V | Tvj = 125°C | Qr |
| 200 |
| µC | ||||
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| Tvj = 150°C |
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| 225 |
| µC | ||||
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Reverse recovery energy | VR = 600 V | Tvj = 125°C | Erec |
| 90,0 |
| mJ | ||||
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| Tvj = 150°C |
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| 105 |
| mJ | ||||
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結(jié)－外殼熱阻 | 每個(gè)二極管 / per diode | RthJC |
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| 37,0 | K/kW | |||||
Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個(gè)二極管 / per diode |
| RthCH |
| 20,0 |
| K/kW | ||||
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反向二極管 / Diode, Reverse
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續(xù)正向直流電流 | IF |
| 120 |
| A | |
Continuous DC forward current | ||||||
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Repetitive peak forward current |
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I2t-值 | VR = 0 V, tP = 10 ms, Tvj = 125°C | I²t |
| 0,17 | kA²s | |
I²t - value | ||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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正向電壓 | IF = 120 A, VGE = 0 V | Tvj = 25°C | VF |
| 1,65 | 2,15 | V |
Forward voltage | IF = 120 A, VGE = 0 V | Tvj = 125°C |
| 1,65 |
| V | |
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結(jié)－外殼熱阻 | 每個(gè)二極管 / per diode |
| RthJC |
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| 340 | K/kW |
Thermal resistance, junction to case |
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英飛凌(Infineon)晶閘管、可控硅、IGBT模塊，優(yōu)派克（eupec）可控硅、可控硅、IGBT模塊。
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